features trenchfet power mosfet new low thermal resistance powerpak package with low 1.07-mm profile pwm optimized for fast switching applications primary side switch for 24-v dc/dc applications secondary synchronous rectifier SI7370DP vishay siliconix new product document number: 71874 s-20826?rev. a, 17-jun-02 www.vishay.com 1 n-channel 60-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.011 @ v gs = 10 v 15.8 60 0.013 @ v gs = 6 v 14.5 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view n-channel mosfet g d s absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 60 gate-source voltage v gs 20 v t a = 25 c 15.8 9.6 continuous drain current (t j = 150 c) a t a = 70 c i d 12.6 7.7 continuous source current i s 4.7 1.7 a pulsed drain current i dm 50 avalanche current b i as 50 single avalanche energy b e as 125 mj t a = 25 c 5.2 1.9 maximum power dissipation a t a = 70 c p d 3.3 1.25 w operating junction and storage temperature range t j , t stg ?55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 10 sec 19 24 maximum junction-to-ambient a steady state r thja 52 65 c/w maximum junction-to-case (drain) steady state r thjc 1.5 1.8 c/w notes a. surface mounted on 1? x 1? fr4 board. b. guaranteed by design, not subject to production testing.
SI7370DP vishay siliconix new product www.vishay.com 2 document number: 71874 s-20826 ? rev. a, 17-jun-02 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 48 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 48 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 50 a v gs = 10 v, i d = 12 a 0.009 0.011 drain-source on-state resistance a r ds(on) v gs = 6.0 v, i d = 10 a 0.0105 0.013 forward transconductance a g fs v ds = 15 v, i d = 10 a 50 s diode forward voltage a v sd i s = 3.0 a, v gs = 0 v 0.75 1.2 v dynamic b total gate charge q g 46 57 gate-source charge q gs v ds = 30 v, v gs = 10 v, i d = 12 a 11.5 nc gate-drain charge q gd 11.5 gate resistance r g 0.85 turn-on delay time t d(on) 16 25 rise time t r v dd = 30 v, r l = 30 12 18 turn-off delay time t d(off) v dd = 30 v, r l = 30 i d 1.0 a, v gen = 10 v, r g = 6 50 75 ns fall time t f 30 45 source-drain reverse recovery time t rr i f = 3.0 a, di/dt = 100 a/ s 40 60 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 10 20 30 40 50 0123456 0 10 20 30 40 50 0246810 v gs = 10 thru 5 v t c = 125 c ? 55 c 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 4 v 2, 3 v
SI7370DP vishay siliconix new product document number: 71874 s-20826 ? rev. a, 17-jun-02 www.vishay.com 3 typical characteristics (25 c unless noted) ? on-resistance ( r ds(on) ) 0 500 1000 1500 2000 2500 3000 3500 4000 0 15304560 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 ? 50 ? 25 0 25 50 75 100 125 150 175 0 2 4 6 8 10 0 1020304050 0.000 0.005 0.010 0.015 0.020 0 1020304050 v ds ? drain-to-source voltage (v) c rss c oss c iss v ds = 30 v i d = 5 a i d ? drain current (a) v gs = 10 v i d = 5 a gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.02 0.04 0.06 0.08 0.10 0246810 i d = 5 a 100 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s v gs = 6 v v gs = 10 v t j = 150 c t j = 25 c
SI7370DP vishay siliconix new product www.vishay.com 4 document number: 71874 s-20826 ? rev. a, 17-jun-02 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 0.001 0 1 80 100 20 10 0.01 single pulse power, juncion-to-ambient time (sec) 60 40 power (w) 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 58 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.1 ? 1.4 ? 1.0 ? 0.6 ? 0.2 0.2 0.6 1.0 ? 50 ? 25 0 25 50 75 100 125 150 175 i d = 250 a threshold voltage variance (v) v gs(th) t j ? temperature ( c) safe operating area v ds ? drain-to-source voltage (v) 100 1 0.01 1 10 100 0.01 10 t c = 25 c single pulse ? drain current (a) i d 0.1 limited by r ds(on) 0.1 10 s 100 s 1 ms 10 ms 100 ms 1 s 10 s 100 s, dc
SI7370DP vishay siliconix new product document number: 71874 s-20826 ? rev. a, 17-jun-02 www.vishay.com 5 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance
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